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2SC3182 - NPN Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.) @IC= 7A Good Linearity of hFE Complement to Type 2SA1265 Minimum Lot-to-Lot variations for robust device performance and reliable operation] APPLICATIONS Power amplifier applications Recommend for 70W high fidelit

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1265 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation] APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3182 isc website：www.iscsemi.
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