Datasheet4U Logo Datasheet4U.com

2SC3184 - NPN Transistor

Description

High breakdown voltage - : VCBO≥900V Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Switching Regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC3184 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
2SC3180 SILICON POWER TRANSISTOR SavantIC
2SC3180 Silicon NPN Transistor Toshiba
2SC3180N SILICON POWER TRANSISTOR SavantIC
2SC3181 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC3180 NPN Transistor
2SC3180N NPN Transistor
2SC3181 NPN Transistor
2SC3182 NPN Transistor
2SC3110 Silicon Power Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage - : VCBO≥900V ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Switching Regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.5 A ICM Collector Current-pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3184 isc website：www.iscsemi.
Published: |