2SC3152 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3152
Manufacturer	Sanyo Semicon Device
File Size	100.70 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC3152_SanyoSemiconDevice.pdf

High breakdown voltage (VCBO≥900V).
Fast switching speed.
Wide ASO. Package Dimensions unit:mm 2022A [2SC3152] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Pulse, PW≤300µs, Duty Cycle≤10% Tc=25˚C Electric.

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Published: Mar 22, 2005 |