2SB827 - PNP/NPN Epitaxial Planar Silicon Tranasistors

Sanyo Semicon Device

Datasheet Details

Part number	2SB827
Manufacturer	Sanyo Semicon Device
File Size	100.34 KB
Description	PNP/NPN Epitaxial Planar Silicon Tranasistors
Datasheet	2SB827_SanyoSemiconDevice.pdf

Low collector-to-emitter saturation voltage : VCE(sat)=(.
)0.4V max.
Wide ASO. Package Dimensions unit:mm 2022A [2SB827/2SD1063] ( ) : 2SB827 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc.

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Published: Mar 22, 2005 |