2SB826 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SB826
Manufacturer	Sanyo Semicon Device
File Size	102.00 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SB826_SanyoSemiconDevice.pdf

Low-saturation collector-to-emitter voltage : VCE(sat)=.
0.5V (PNP), 0.4V (NPN) max.
Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2010C [2SB826/2SD1062] ( ) : 2SB826 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP.

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Published: Mar 22, 2005 |