2SB1131 - PNP Transistor

Sanyo Semicon Device

Datasheet Details

Adoption of FBET, MBIT processes.
Low saturation voltage.
Large current capacity.
Fast switching time. Package Dimensions unit:mm 2006A [2SB1131] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta =.

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Published: Mar 22, 2005 |