2SA1967 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SA1967
Manufacturer	Sanyo Semicon Device
File Size	88.48 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SA1967_SanyoSemiconDevice.pdf

High breakdown voltage (VCEO min=.
900V).
Small Cob (Cob typ=2.2pF).
High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SA1967] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristi.

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Published: Mar 22, 2005 |