2SA1960 - Silicon NPN Epitaxial Planar Transistor

Hitachi Semiconductor

Datasheet Details

Part number	2SA1960
Manufacturer	Hitachi Semiconductor
File Size	29.39 KB
Description	Silicon NPN Epitaxial Planar Transistor
Datasheet	2SA1960_HitachiSemiconductor.pdf

High voltage large current operation. VCEO =.
80 V, IC =.
300 mA.
High fT . fT = 1.3 GHz.
Small output capacitance. Cob = 2.9 pF 2SA1960 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings.

📁 2SA1960 Similar Datasheet

2SA1961 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
2SA1962 - Silicon PNP Transistor (Toshiba Semiconductor)
2SA1963 - PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
2SA1964 - Silicon PNP Power Transistor (INCHANGE)
2SA1965 - PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
2SA1965-S - PNP Transistor (Sanyo Semicon Device)
2SA1967 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
2SA1968 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)

Other Datasheets by Hitachi Semiconductor

Published: Mar 22, 2005 |