2SA1900 - Medium Power Transistor

Datasheet Details

1) Low saturation voltage, typically VCE(sat)=.
0.15V at IC/ IB=.
500mA/.
50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SC5053 zDimensions (Unit : mm) MPT3 z Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter- base voltage Collector current Symbol VCBO VCEO VEBO IC Limits.
60.
50.
5.
1.
2 Collector power dissipation PC 0.5 2 Collector power dissipation tj.

📁 2SA1900 Similar Datasheet

2SA1900U - PNP Transistor (SEMTECH)
2SA1905 - Silicon PNP Epitaxial Type Transistor (Toshiba Semiconductor)
2SA1906 - High-speed Switching Transistor (ROHM)
2SA1907 - Silicon PNP Transistor (Sanken electric)
2SA1908 - Silicon PNP Transistor (Sanken electric)
2SA1909 - Silicon PNP Transistor (Sanken electric)
2SA1923 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR (Toshiba Semiconductor)
2SA1924 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR (Toshiba Semiconductor)

Other Datasheets by Rohm

Published: Mar 22, 2005 |