K9G8G08U0A-W000 - FLASH MEMORY DIE

Samsung

Datasheet Details

Power Supply Voltage : 2.7V ~ 3.6V Organization : (1G+32M) x 8bit May contain up to 100 invalid blocks Functionally Tested Only 256KB Block Erase operation 2KB Page Program/ Read Operation Tray Packing for Chip or Jar Packing for Wafer FLASH MEMORY DIE 1.2 General Physical Specifications.
Backside die surface of polished bare silicon Die Thickness = 725±10um(Bare Wafer) or 200um (Back L.

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Published: Feb 12, 2014 |