K9G8G08U0M - (K9XXG08UXM) Flash Memory

Samsung Electronics

Datasheet Details

Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

Voltage Supply : 2.7 V ~ 3.6 V.
Organization - Memory Cell Array : (1G + 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).

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Published: Sep 26, 2007 |