K9G8G08B0B - FLASH MEMORY

Samsung

Datasheet Details

Offered in 1Gx8bit, the K9G8G08X0B is a 8G-bit NAND Flash Memory with spare 256M-bit.

Voltage Supply - 2.7V Device(K9G8G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9G8G08U0B) : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Progr.

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Published: Mar 15, 2016 |