K6R4008C1C 512K x 8bit High Speed Static CMOS SRAM

Samsung

Description

PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(5V Operating).Operated at Extended and.
The K6R4008C1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits.

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Datasheet Specifications

Part number: K6R4008C1C
Manufacturer: Samsung
File Size: 183.32 KB
Datasheet: K6R4008C1C_Samsung.pdf
Description: 512K x 8bit High Speed Static CMOS SRAM

Features

* Fast Access Time 10,12,15,20ns(Max. )
* Low Power Dissipation Standby (TTL) : 60mA(Max. ) (CMOS) : 10mA(Max. ) Operating K6R4008C1C-10 : 170mA(Max. ) K6R4008C1C-12 : 160mA(Max. ) K6R4008C1C-15 : 150mA(Max. ) K6R4008C1C-20 : 140mA(Max. )
* Single 5.0V±10% Power Supply
* TTL

Applications

* The K6R4008C1C is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II. FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 I/O1 ~I/O8 ORDERING INFORMATION K6R4008C1C-C10/C12/C15/C20 Commercial Temp. Extended Temp. Industrial Temp. K6R4008C1C-E10/E12/E15/E20 K6R400

K6R4008C1C Distributors

📁 Related Datasheet

K6R4008C1D K6R4008V1B K6R4008V1B-C K6R4008V1B-I K6R4008V1B-L K6R4008V1B-P

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K6R4008C1C 512K 8bit High Speed Static CMOS SRAM Samsung

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