K6R4008V1C 512Kx8 Bit High Speed Static

Samsung semiconductor

Description

www.DataSheet4U.com PRELIMINARY CMOS SRAM K6R4008V1C-C/C-L, K6R4008V1C-I/C-P 3Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating).Opera.
The K6R4008V1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits.

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Datasheet Specifications

Part number: K6R4008V1C
Manufacturer: Samsung semiconductor
File Size: 175.22 KB
Datasheet: K6R4008V1C_Samsungsemiconductor.pdf
Description: 512Kx8 Bit High Speed Static

Features

* Fast Access Time 10,12,15ns(Max. )
* Low Power Dissipation Standby (TTL) : 60mA(Max. ) (CMOS) : 10mA(Max. ) 1.2mA(Max. ) L-Ver. only Operating K6R4008V1C-10 : 155mA(Max. ) K6R4008V1C-12 : 145mA(Max. ) K6R4008V1C-15 : 135mA(Max. )
* Single 3.3±0.3V Power Supply
* TTL Compat

Applications

* The K6R4008V1C is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II. FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 I/O1 ~I/O8 ORDERING INFORMATION K6R4008V1C-C10/C12/C15 Commercial Temp. Industrial Temp. K6R4008V1C-I10/I12/I15 Pre-Charge Circuit Row Sele

K6R4008V1C Distributors

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K6R4008V1C 512Kx8 Bit High Speed Static Samsung semiconductor

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