K6R4008V1B 512K x8 Bit High Speed Static RAM

Samsung semiconductor

Description

www.DataSheet4U.com PRELIMINARY CMOS SRAM K6R4008V1B-C/B-L, K6R4008V1B-I/B-P Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating).Operat.
The K6R4008V1B is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits.

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Datasheet Specifications

Part number: K6R4008V1B
Manufacturer: Samsung semiconductor
File Size: 182.98 KB
Datasheet: K6R4008V1B_Samsungsemiconductor.pdf
Description: 512K x8 Bit High Speed Static RAM

Features

* Fast Access Time 10,12,15ns(Max. )
* Low Power Dissipation Standby (TTL) : 50mA(Max. ) (CMOS) : 10mA(Max. ) 1.2mA(Max. )- L-Ver. Operating K6R4008V1B-10 : 205mA(Max. ) K6R4008V1B-12 : 200mA(Max. ) K6R4008V1B-15 : 195mA(Max. )
* Single 3.3 ±0.3V Power Supply
* TTL Compatibl

Applications

* The K6R4008V1B is packaged in a 400 mil 36-pin plastic SOJ or TSOP(II) forward or 44-pin plastic TSOP(II) forward. FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A3 A4 A5 A6 A7 A8 I/O1~I/O8 A2 ORDERING INFORMATION K6R4008V1B-C10/C12/C15 Commercial Temp. Industrial Temp. K6R4008V1B-I10/I12/I15 Pre-Charg

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K6R4008V1B 512K Bit High Speed Static RAM Samsung semiconductor

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