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K4M511633E-P - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Samsung

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Datasheet Details

Part number: K4M511633E-P
Manufacturer: Samsung
File Size: 112.42 KB
Datasheet: K4M511633E-P_Samsungsemiconductor.pdf
Description: 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M511633E-P Product details

Description

The K4M511633E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with

Features

3.0V or 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PAS.

K4M511633E-P Stock/Price

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