K4M511633E-L 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Samsung

Description

K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M511633E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4M511633E-L
Manufacturer: Samsung
File Size: 112.42 KB
Datasheet: K4M511633E-L_Samsungsemiconductor.pdf
Description: 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Features

* 3.0V or 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle

Applications

* ORDERING INFORMATION Part No. K4M511633E-Y(P)C/L/F75 K4M511633E-Y(P)C/L/F1H K4M511633E-Y(P)C/L/F1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 54 FBGA Leaded (Lead Free) Interface Package - Y(P)C/L/F : Normal / Low Power, Commercial Temperature(-25°C ~ 70°C) Notes : 1. In case o

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K4M511633E-L 16Bit Banks Mobile SDRAM 54FBGA Samsung

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