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K4B2G0846Q - 2Gb Q-die DDR3L SDRAM

General Description

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Key Features

  • 3. Package pinout/Mechanical Dimension & Addressing6 3.1 x4 Package Pinout (Top view) : 78ball FBGA Package 6 3.2 x8 Package Pinout (Top view) : 78ball FBGA Package 7 3.3 FBGA Package Dimension (x4/x8) 8 4. Input/Output Functional.

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Other Datasheets by Samsung Semiconductor

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K4B2G0846B 2Gb B-die DDR3 SDRAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Rev. 1.2, Apr. 2014 K4B2G0446Q K4B2G0846Q 2Gb Q-die DDR3L SDRAM 1.35V 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise.