Datasheet Details
| Part number | K7R323684M |
|---|---|
| Manufacturer | Samsung semiconductor |
| File Size | 202.00 KB |
| Description | 1M x 36 & 2M x 18 QDR II b4 SRAM |
| Datasheet |
 K7R323684M Datasheet
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| Part number | K7R323684M |
|---|---|
| Manufacturer | Samsung semiconductor |
| File Size | 202.00 KB |
| Description | 1M x 36 & 2M x 18 QDR II b4 SRAM |
| Datasheet |
K7R323684M Datasheet
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on page 2 and add HSTL I/O comment 0.3 1. Update current characteristics in DC electrical characteristics 2. Change AC timing characteristics 3. Update JTAG instruction coding and diagrams 0.4 1. Add -FC25 part(AC Characteristics) 2. Add AC electrical characteristics.3. Change AC timing characteristics 4. Change DC electrical characteristics(ISB1) 0.5 1. Change the data Setup/Hold time.2. Change the Access Time.(tCHQV, tCHQX, etc.) 3
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