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K7R163684B - 512Kx36 & 1Mx18 QDR II b4 SRAM

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Datasheet preview – K7R163684B

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Part number K7R163684B
Manufacturer Samsung semiconductor
File Size 418.88 KB
Description 512Kx36 & 1Mx18 QDR II b4 SRAM
Datasheet download datasheet K7R163684B Datasheet
Note This datasheet PDF includes multiple part numbers: K7R163684B, K7R.
Please refer to the document for exact specifications by model.
Additional preview pages of the K7R163684B datasheet.

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Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Address Inputs Data Inputs 1 NOTE Q0-35 W R BW0, BW1,BW2, BW3 VREF ZQ VDD VDDQ VSS TMS TDI TCK TDO NC Data Outputs Write Control Pin,active when low Read Control Pin,active when low Block Write Control Pin,active when low Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 1.8 V ) Output Power Supply ( 1.5V or 1.8V ) Ground JTAG Test Mode Select JTAG Test Data Input JTAG Test Clock JTAG Test

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