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K6R1016V1D - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

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Samsung semiconductor

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K6R1016V1D 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. by Samsung semiconductor - Datasheet Preview — Datasheet preview – K6R1016V1D

Datasheet Details

Part number	K6R1016V1D
Manufacturer	Samsung semiconductor
File Size	259.83 KB
Description	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
Datasheet	K6R1016V1D Datasheet
Note	This datasheet PDF includes multiple part numbers: K6R1016V1D, K6R-1016V. Please refer to the document for exact specifications by model.
Additional preview pages of the K6R1016V1D datasheet.

Product details

Description

The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits.

Features

Fast Access Time 8,10ns(Max. ).
Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) Operating K6R1016V1D- 08: 80mA(Max. ) K6R1016V1D-10: 65mA(Max. ).
Single 3.3V Power Supply.
TTL Compatible Inputs and Outputs.
Fully Static Operation - No Clock or Refresh required.
Three State Outputs.
Center Power/Ground Pin Configuration.
Data Byte Control: LB: I/O1~ I/O 8, UB: I/O9~ I/O16.
Standard Pin Configuration.

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Published: Apr 7, 2005 |