K6R1008V1B-C - 128Kx8 Bit High Speed Static RAM

Samsung semiconductor

Datasheet Details

The K6R1008V1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits..

Fast Access Time 8,10,12ns(Max. ).
Low Power Dissipation Standby (TTL) : 50mA(Max. ) (CMOS) : 5mA(Max. ) 0.7mA(Max. ) - L-Ver. only Operating K6R1008V1B-8 : 160mA(Max. ) K6R1008V1B-10 : 155mA(Max. ) K6R1008V1B-12 : 150mA(Max. ).
Single 3.3±0.3V Power Supply.
TTL Compatible Inputs and Outputs.
Fully Static Operation - No Clock or Refresh required.
Three State Outputs.
2V Minimum Data Retention ; L-Ver. only www. DataSheet4U. com.
Cen.

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