K6R1008V1B-C 128Kx8 Bit High Speed Static RAM

Samsung semiconductor

Description

K6R1008V1B-C/B-L, K6R1008V1B-I/B-P Document Title Preliminary PRELIMINARY CMOS SRAM 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary .
The K6R1008V1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits.

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Datasheet Specifications

Part number: K6R1008V1B-C
Manufacturer: Samsung semiconductor
File Size: 153.80 KB
Datasheet: K6R1008V1B-C_Samsungsemiconductor.pdf
Description: 128Kx8 Bit High Speed Static RAM

Features

* Fast Access Time 8,10,12ns(Max. )
* Low Power Dissipation Standby (TTL) : 50mA(Max. ) (CMOS) : 5mA(Max. ) 0.7mA(Max. ) - L-Ver. only Operating K6R1008V1B-8 : 160mA(Max. ) K6R1008V1B-10 : 155mA(Max. ) K6R1008V1B-12 : 150mA(Max. )
* Single 3.3±0.3V Power Supply
* TTL Compati

Applications

* The K6R1008V1B is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION K6R1008V1B-C8/C10/C12 K6R1008V1B-I8/I10/I12 Commercial Temp. Industrial Temp. PIN CONFIGURATION(Top View) A0 A1 1 2 3 4 5 6 7 8 9 32 A16 31 A15 30 A14 29 A13 28 OE 27 I/O8 26 I/O7 FUNCTIONAL BLOCK DI

K6R1008V1B-C Distributors

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K6R1008V1B-C 128Kx8 Bit High Speed Static RAM Samsung semiconductor

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