Datasheet4U Logo Datasheet4U.com

K6F3216T6M - 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

General Description

The K6F3216T6M families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 2M x16.
  • Power Supply Voltage: 2.7~3.6V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 55-TBGA-7.50x12.00 CMOS SRAM.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K6F1008R2M SRAM Samsung Electronics
K6F1008S2M SRAM Samsung Electronics
K6F1008V2M SRAM Samsung Electronics
K6F4016R4G 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM SAMSUNG Electronics

Other Datasheets by Samsung Semiconductor

Part Number Description
K6F3216T6M-F 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F3216U6M 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1008V2C 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
K6F1016U4B CMOS SRAM
K6F1616R6A CMOS SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K6F3216T6M Family Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 1.0 Draft Date November 4, 2003 Remark Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 November 2002 K6F3216T6M Family FEATURES • Process Technology: Full CMOS • Organization: 2M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 55-TBGA-7.50x12.