K6F3216T6M - 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

The K6F3216T6M by Samsung semiconductor is a 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM. Below is the official datasheet preview.

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K6F3216T6M 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K6F3216T6M** 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K6F3216T6M
Manufacturer	Samsung semiconductor
File Size	167.24 KB
Description	2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F3216T6M_Samsungsemiconductor.pdf
Additional preview pages of the K6F3216T6M datasheet.

K6F3216T6M Product details

Description

The K6F3216T6M families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 2M x16.
Power Supply Voltage: 2.7~3.6V.
Low Data Retention Voltage: 1.5V(Min).
Three State Outputs.
Package Type: 55-TBGA-7.50x12.00 CMOS SRAM.

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Published: Apr 7, 2005 |