K4S643233F-SE 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

Samsung semiconductor

Description

www.DataSheet4U.com K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev..
The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high per.

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Datasheet Specifications

Part number: K4S643233F-SE
Manufacturer: Samsung semiconductor
File Size: 90.62 KB
Datasheet: K4S643233F-SE_Samsungsemiconductor.pdf
Description: 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

Features

* 3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled

Applications

* ORDERING INFORMATION Part No. K4S643233F-SE/N/I/P75 K4S643233FSE/N/I/P1H K4S643233F-SE/N/I/P1L K4S643233F-DE/N/I/P75 K4S643233F-DE/N/I/P1H K4S643233F-DE/N/I/P1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=2) 105MHz(CL=3)

K4S643233F-SE Distributors

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K4S643233F-SE 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM Samsung semiconductor

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