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K4S643233F-SDE - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

Download the K4S643233F-SDE datasheet PDF. This datasheet also covers the K4S643233F-SE variant, as both devices belong to the same 2mx32 mobile sdram 90fbga cmos sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock.

Key Features

  • 3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at the positive going edge of the system clock . Burst read single-bit write operation. DQM for masking. Auto & self refresh. 64ms refresh period (4K cycle). Extended temperature operation (-25°C to.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S643233F-SE_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K4S643232H-TC-L50 64Mb H-die (x32) SDRAM Samsung
K4S643232H-TC-L55 64Mb H-die (x32) SDRAM Samsung
K4S643232H-TC-L60 64Mb H-die (x32) SDRAM Samsung
K4S643232H-TC-L70 64Mb H-die (x32) SDRAM Samsung
K4S643232H-UC-L50 2M x 32 SDRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K4S643233F-SDI 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDN 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDP 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SE 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SI 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev. 1.5 Dec. 2002 www.DataSheet4U.com K4S643233F-S(D)E/N/I/P 512K x 32Bit x 4 Banks SDRAM FEATURES • • • • 3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at the positive going edge of the system clock . Burst read single-bit write operation. DQM for masking. Auto & self refresh. 64ms refresh period (4K cycle). Extended temperature operation (-25°C to 85 °C). Industrial temperature operation ( -40° C to 85° C).