K4S643232E Datasheet - Samsung semiconductor

K4S643232E 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

The K4S643232E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock c.

K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 (Oct. 2001) K4S643232E Revision History Revision 1.3 (October 24, 2000) Removed CAS Latency 1 from the spec. CMOS SDRAM Revision 1.2 (August 7, 2000) - Target Added CAS Latency 1 Revision 1.1 (March 14, 2001) Added K4S643232E-55 Revision 1.0 (Octo.

K4S643232E Features

* 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive

K4S643232E_Samsungsemiconductor.pdf