K4S51163PF-F1L - 8M x 16Bit x 4 Banks Mobile-SDRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S51163PF-F1L
Manufacturer	Samsung semiconductor
File Size	114.14 KB
Description	8M x 16Bit x 4 Banks Mobile-SDRAM
Datasheet	K4S51163PF-F1L Datasheet
Additional preview pages of the K4S51163PF-F1L datasheet.

Product details

Description

The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR.

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Published: Apr 7, 2005 |