K4S511533F-YPF, K4S511533F-YC - 8M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

The K4S511533F-YPF by Samsung semiconductor is a 8M x 16Bit x 4 Banks Mobile SDRAM. Below is the official datasheet preview.

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K4S511533F-YPF 8M x 16Bit x 4 Banks Mobile SDRAM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K4S511533F-YPF** 8M x 16Bit x 4 Banks Mobile SDRAM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K4S511533F-YPF, K4S511533F-YC
Manufacturer	Samsung semiconductor
File Size	137.01 KB
Description	8M x 16Bit x 4 Banks Mobile SDRAM
Datasheet	K4S511533F-YC_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K4S511533F-YPF, K4S511533F-YC. Please refer to the document for exact specifications by model.
Additional preview pages of the K4S511533F-YPF datasheet.

K4S511533F-YPF Product details

Description

The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

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Other Datasheets by Samsung semiconductor

K4S511533F-YPC - 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YPL - 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YC - 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YF - 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YL - 8M x 16Bit x 4 Banks Mobile SDRAM
K4S51153LF - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Published: Apr 12, 2010 |