Datasheet Details
- Part number
- K4S510832M
- Manufacturer
- Samsung semiconductor
- File Size
- 103.92 KB
- Datasheet
- K4S510832M_Samsungsemiconductor.pdf
- Description
- 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S510832M Description
K4S510832M Preliminary CMOS SDRAM 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0.2 Dec.2001 Samsung El.
The K4S510832M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG's high.
K4S510832M Features
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are
K4S510832M Applications
* ORDERING INFORMATION
Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL Interface Package 54pin TSOP(II)
FUNCTIONAL BLOCK DIAGRAM
I/O Control
LWE
Data Input Register
LDQM
Bank Select 16M x 8 16M x 8 16M x 8 16M x 8 Refresh Counter
Output Buffer
Row Decoder
Sense AMP
Row Buffer
DQi
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