K4S510732B Stacked 512Mbit SDRAM

Samsung semiconductor

Description

Preliminary K4S510732B CMOS SDRAM Stacked 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0.0 Feb.2001 The K4S510732B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG's high.

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Datasheet Specifications

Part number: K4S510732B
Manufacturer: Samsung semiconductor
File Size: 94.25 KB
Datasheet: K4S510732B_Samsungsemiconductor.pdf
Description: Stacked 512Mbit SDRAM

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* ORDERING INFORMATION Part No. K4S510732B-TC/L75 K4S510732B-TC/L1H K4S510732B-TC/L1L Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL Interface Package 54pin TSOP(II) FUNCTIONAL BLOCK DIAGRAM CLK,CAS,RAS /WE,DQM /CS1,CKE1 32Mx8 32Mx8 /CS0,CKE0 DQ0 ~ DQ7 A0~A12,BA0,BA1
* Samsung Ele

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K4S510732B Stacked 512Mbit SDRAM Samsung semiconductor

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