K4S28323LF - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S28323LF
Manufacturer	Samsung semiconductor
File Size	141.48 KB
Description	1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet	K4S28323LF Datasheet
Additional preview pages of the K4S28323LF datasheet.

Product details

Description

The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

📁 Similar Datasheet

K4S280432I - JEDEC standard 3.3V power supply LVTTL compatible (Samsung Semiconductor)
K4S280832B - 128M-bit SDRAM (Samsung Electronics)
K4S280832I - JEDEC standard 3.3V power supply LVTTL compatible (Samsung Semiconductor)
K4S281632I - JEDEC standard 3.3V power supply LVTTL compatible (Samsung Semiconductor)
K4S281632K - 128Mb K-die SDRAM (Samsung)
K4S1G0632D - SDRAM stacked 1Gb D-die (Samsung Electronics)
K4S1G0732D - SDRAM stacked 1Gb D-die (Samsung Electronics)
K4S510432D - 512Mb D-die SDRAM (Samsung)

Other Datasheets by Samsung semiconductor

K4S28323LF-ER1H - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S28323LF-F - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S28323LF-FR60 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S28323LF-HER75 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S28323LF-NR1L - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Published: Apr 7, 2005 |