K4S283233F - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S283233F
Manufacturer	Samsung semiconductor
File Size	140.98 KB
Description	1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet	K4S283233F Datasheet
Note	This datasheet PDF includes multiple part numbers: K4S283233F, K4S. Please refer to the document for exact specifications by model.
Additional preview pages of the K4S283233F datasheet.

Product details

Description

The K4S283233F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

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Other Datasheets by Samsung semiconductor

K4S283233F-C - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-F1H - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-F1L - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-F60 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-F75 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-FE - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Published: Apr 7, 2005 |