K4S281632F-Txx 128Mb F-die SDRAM

Samsung semiconductor

Description

SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification m o .c U 4 t e e h S a t a .D w Revision 1.1 w February 2004 w * Sa.
The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4.

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Datasheet Specifications

Part number: K4S281632F-Txx
Manufacturer: Samsung semiconductor
File Size: 169.29 KB
Datasheet: K4S281632F-Txx_Samsungsemiconductor.pdf
Description: 128Mb F-die SDRAM

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

Applications

* Ordering Information Part No. K4S280432F-TC(L)75 K4S280832F-TC(L)75 K4S281632F-TC(L)60/75 Orgainization 32M x 4 16M x 8 8M x 16 Max Freq. 133MHz (CL=3) 133MHz (CL=3) 166MHz (CL=3) LVTTL 54pin TSOP(II) Interface Package Organization 32Mx4 16Mx8 8Mx16 Row Address A0~A11 A0~A11 A0~A11 Column Addre

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📁 Related Datasheet

K4S281632I K4S281632K K4S280432I K4S280832B K4S280832I K4S1G0632D

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K4S281632F-Txx 128Mb F-die SDRAM Samsung semiconductor

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