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K4S280432F-UC75 - 128Mb F-die SDRAM

Download the K4S280432F-UC75 datasheet PDF. This datasheet also covers the K4S281632F-Uxx variant, as both devices belong to the same 128mb f-die sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM (x4,x8) & L(U)DQM (x16) for masking.
  • Auto & self refresh.
  • 64ms.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S281632F-Uxx_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K4S280832B 128M-bit SDRAM Samsung Electronics
K4S281632K 128Mb K-die SDRAM Samsung
K4S1G0632D SDRAM stacked 1Gb D-die Samsung Electronics
K4S1G0732D SDRAM stacked 1Gb D-die Samsung Electronics
K4S510432D 512Mb D-die SDRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K4S280432F-UL75 128Mb F-die SDRAM
K4S280432F-TC75 128Mb F-die SDRAM Specification
K4S280432F-TL75 128Mb F-die SDRAM Specification
K4S280432F 128Mb F-die SDRAM Specification
K4S280432A 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification t4U.com54 TSOP-II with Pb-Free e(RoHS compliant) w.DataSheRevision 1.2 ww August 2004 heet4U.com* Samsung Electronics reserves the right to change products or specification without notice. www.DataSRev. 1.2 August 2004 SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 1.0 (January, 2004) - First release. Revision 1.1 (May, 2004) • Added Note 5. sentense of tRDL parameter. Revision 1.2 (August, 2004) • Corrected typo. CMOS SDRAM Rev. 1.2 August 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 8M x 4Bit x 4 Banks / 4M x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.