K4S280832B - 128M-bit SDRAM

Samsung Electronics

General Description

The K4S280832B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Key Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle.

📥 Download Datasheet

K4S280832B 128m-bit sdram by Samsung Electronics - Datasheet Preview

Datasheet Details

Part number	K4S280832B
Manufacturer	Samsung Electronics
File Size	107.62 KB
Description	128M-bit SDRAM
Datasheet	K4S280832B Datasheet

Full PDF Text Transcription for K4S280832B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4S280832B. For precise diagrams, and layout, please refer to the original PDF.

K4S280832B CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or speci...

View more extracted text

9 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832B 4M x 8Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock.

📁 Similar Datasheet

Part Number	Description	Manufacturer
K4S280832A	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S280832C	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S280832E-TC75	128Mb E-die SDRAM Specification	Samsung semiconductor
K4S280832E-TL75	128Mb E-die SDRAM Specification	Samsung semiconductor
K4S280832F-TC75	128Mb F-die SDRAM Specification	Samsung semiconductor

More Datasheets from Samsung Electronics

Part Number	Description
K4S1G0632D	SDRAM stacked 1Gb D-die
K4S1G0732D	SDRAM stacked 1Gb D-die
K4S561632H	256Mb H-Die SDRAM
K4S641632H	64Mb H-die SDRAM