K4S280432D 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Samsung semiconductor

Description

www.DataSheet4U.com K4S280432D CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Rev.0.1 Sept.2001 * Samsung Electronics .
The K4S280432C is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high p.

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Datasheet Specifications

Part number: K4S280432D
Manufacturer: Samsung semiconductor
File Size: 102.74 KB
Datasheet: K4S280432D_Samsungsemiconductor.pdf
Description: 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave)
* All inputs are sampled a

Applications

* ORDERING INFORMATION Part No. K4S280432D-TC/L7C K4S280432D-TC/L75 K4S280432D-TC/L1H K4S280432D-TC/L1L Max Freq. 133MHz(CL=2) 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54 TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Data Input Register LDQM Bank Select 8M x 4 8M x 4

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K4S280432D 128Mbit SDRAM 4Bit Banks Synchronous DRAM LVTTL Samsung semiconductor

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