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K4R571669D - 256/288Mbit RDRAM(D-die)

General Description

Signal SIO1,SIO0 CMD I/O I/O I Type CMOSa CMOSa # Pins center 2 1 Description Serial input/output.

Pins for reading from and writing to the control registers using a serial access protocol.

Also used for power management.

Key Features

  • for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™.

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Part Number Description Manufacturer

Other Datasheets by Samsung Semiconductor

Part Number Description
K4R271669A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R271669B 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R271669E 128Mbit RDRAM(E-die)
K4R271669F 128Mbit RDRAM(F-die)
K4R441869A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R571669D/K4R881869D Change History Direct RDRAM™ Version 1.4( July 2002) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets) - Based on the 256/288Mb A-die RDRAM Version 1.4 Page 0 Version 1.4 July 2002 K4R571669D/K4R881869D Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.