KM736V799 Datasheet (Samsung Semiconductor)

KM736V799, 128Kx36 Synchronous SRAM

The KM736V799 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

It is organized as 128K words of 36bits and integrates address and control registers, a 2-bit burst address counter and added some new funct

KM736V799 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev.

No 0.0 0.1 History Initial draft Change Undershoot spec from -3.0V(pulse width≤20ns) to -2.0V(pulse width≤tCYC/2) Add Overshoot spec 4.6V(pulse width≤tCYC/2) Change VIH max from 5.5V to VDD+0.5V Change tCD from 3.2ns to 3.1ns at bin -50.

Change tOE from 3.2ns to 3.1ns at bin -50.

Change setup from 1.5ns to 1.4ns at bin -50.

Change tCYC from 5.5ns to 5.4ns at bin -55.

Change tCD

KM736V799 Features

* Synchronous Operation.

* 2 Stage Pipelined operation with 4 Burst.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* VDD= 3.3V+0.165V/-0.165V Power Supply.

* VDDQ Supply Voltage 3.3V+0.165V/-0.165