KM736V790 Datasheet (Samsung Semiconductor)

KM736V790, 128Kx36 Synchronous SRAM

The KM736V790 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

It is organized as 128K words of 36bits and integrates address and control registers, a 2-bit burst address counter and added some new funct

KM736V790 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev.

No.

0.0 0.1 History Initial draft Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, Change 7.5 bin to 7.2 Change speed bin from 60/67/75/85 to 72/85/10.

Change DC characteristics V DD condition from 3.3V±5% to 3.3V+10%/-5% Change Input/output leackage currant for ±1µ A to ±2µA, Insert Note 4 at AC timing characteristics.

Modify read timing & Power down cycle timing.

Change ISB

KM736V790 Features

* Synchronous Operation.

* 2 Stage Pipelined operation with 4 Burst.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* VDD= 3.3V+0.3V/-0.165V Power Supply.

* VDDQ Supply Voltage 3.3V+0.3V/-0.165V fo