KM736V749 Datasheet (Samsung Semiconductor) - (KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM

KM736V749, (KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM

The KM736V749 and KM718V849 are 4,718,592 bits Synchronous Static SRAMs.

The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.

Address, data inputs, and all control signals except output enable and linear burst order are synchronized to

KM736V749 KM718V849 Document Title 128Kx36 & 256Kx18 Pipelined NtRAMTM 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev.

No.

0.0 0.1 History 1.

Initial document.

Changed tCD,tOE from 4.0ns to 4.2ns at -75 2.

Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA.

Add VDDQ Supply voltage( 2.5V I/O ) Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.

Final spec Release.

Remove VDDQ Supply voltage( 2.5V I/O ) Add VDDQ Supply voltage( 2.5V

KM736V749 Features

* 3.3V+0.165V/-0.165V Power Supply.

* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.

* Byte Writable Function.

* Enable clock and suspend operation.

* Single READ/WRITE control pin.

* Self-Timed Write Cycle.