| Part number | K4H561638D-TCB3, K4H560838D-TCB3 |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 205.14 KB |
| Description | 256Mb D-die DDR Sdram |
| Datasheet |
 K4H560838D-TCB3_SamsungSemiconductor.pdf
|
| Note |
This datasheet PDF includes multiple part numbers: K4H561638D-TCB3, K4H560838D-TCB3. Please refer to the document for exact specifications by model. |
SYMBOL CK, CK DDR SDRAM TYPE Input DESCRIPTION Clock : CK and CK are differential clock inputs.All address and control input signals are sampled on the positive edge of CK and negative edge of CK.Output (read) data is referenced to both edges of CK.Internal clock signals are derived from CK/CK.Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers.Deactivating the clock provides PRECHARGE POWER-DOWN and SELF REFRESH
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