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K9LAG08U1M (K9XXG08UXM) Flash Memory

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Description

www.DataSheet4U.com K9LAG08U1M K9G8G08U0M Preliminary FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PROD.
Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

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Datasheet Specifications

Part number
K9LAG08U1M
Manufacturer
Samsung Electronics
File Size
1.01 MB
Datasheet
K9LAG08U1M_SamsungElectronics.pdf
Description
(K9XXG08UXM) Flash Memory

Features

* Voltage Supply : 2.7 V ~ 3.6 V
* Organization - Memory Cell Array : (1G + 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit
* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte
* Page Read Operation - Page Size : (2K + 64)By

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

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