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SPN230N06 - N-Channel MOSFET

Description

The SPN230N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 60V/190A, RDS(ON)=3.0mΩ@VGS=10V.
  • High density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220 package design PIN.

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Datasheet Details

Part number SPN230N06
Manufacturer SYNC POWER
File Size 455.76 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN230N06 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN230N06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN230N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  AC/DC Synchronous Rectifier  Load Switch  UPS  Power Tool  Motor Control FEATURES  60V/190A, RDS(ON)=3.
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