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VNV35NV04-E fully autoprotected Power MOSFET

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Description

VNB35NV04-E, VNP35NV04-E, VNV35NV04-E OMNIFET II: fully autoprotected Power MOSFET 3 1 D2PAK 10 1 PowerSO-10 3 2 1 TO-220 .
The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement.

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Features

* Type RDS(on) VNB35NV04-E VNP35NV04-E VNV35NV04-E 10 mΩ(1) 1. For PowerSO-10 only Ilim 30 A Vclamp 40 V
* Linear current limitation
* Thermal shutdown
* Short circuit protection
* Integrated clamp
* Low current drawn from input pin Datasheet - producti

Applications

* Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

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