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VNV35NV04 fully autoprotected Power MOSFET

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Description

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The VNB35NV04 and VNV35NV04 are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Powe.

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Features

* VNB35NV04 VNV35NV04 OMNIFET II fully autoprotected Power MOSFET Datasheet
* production data Type RDS(on) Ilim Vclamp )VNB35NV04 10 mΩ(1) VNV35NV04 t(s1. For PowerSO-10 only 30 A 40 V duc
* Linear current limitation ro
* Thermal shut down P
* Short circuit protection te
* In

Applications

* Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Table 1. Device summary Pac

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