STW8NC90Z Datasheet - STMicroelectronics

STW8NC90Z, N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW8NC90Z www.DataSheet4U.com s TYPICAL s STW8NC90Z VDSS 900 V RDS(o.
The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-.

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Datasheet Details

Part number:

STW8NC90Z

Manufacturer:

STMicroelectronics ↗

File Size:

208.82 KB

Description:

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

Applications

* APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drai

STW8NC90Z Distributors

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STW8NC90Z N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS STMicroelectronics

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