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STP310N10F7 N-channel Power MOSFET

STP310N10F7 Description

STP310N10F7 N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ VII DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data .
This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

STP310N10F7 Features

* TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% Order code STP310N10F7 VDS RDS(on) max. ID 100 V 2.7 mΩ 180 A
* Ultra low on-resistance

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N-channel Power MOSFET STMicroelectronics
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