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STHI07N50FI, STHI07N50 - HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STHI07N50FI Description

STHI07N50 STHI07N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY OATA TYPE STHI07N50 STHI07N50FI Voss 500 .

STHI07N50FI Features

* a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and rel

STHI07N50FI Applications

* AUTOMOTIVE IGNITION

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: STHI07N50FI, STHI07N50. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
STHI07N50FI, STHI07N50
Manufacturer
STMicroelectronics ↗
File Size
195.11 KB
Datasheet
STHI07N50-STMicroelectronics.pdf
Description
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Note
This datasheet PDF includes multiple part numbers: STHI07N50FI, STHI07N50.
Please refer to the document for exact specifications by model.

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📌 All Tags

HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS STMicroelectronics
STMicroelectronics STHI07N50FI-like datasheet