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STH110N10F7-2 N-CHANNEL POWER MOSFET

STH110N10F7-2 Description

STH110N10F7-2, STH110N10F7-6 N-channel 100 V, 4.9 mΩ typ.,110 A, STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production dat.
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also.

STH110N10F7-2 Features

* Order code STH110N10F7-2 STH110N10F7-6 VDS 100 V RDS(on) max. 6.5 mΩ ID PTOT 110 A 150 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity

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N-CHANNEL POWER MOSFET STMicroelectronics
STMicroelectronics STH110N10F7-2-like datasheet