STHI07N50 Datasheet - STMicroelectronics

STHI07N50, HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STHI07N50 STHI07N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY OATA TYPE STHI07N50 STHI07N50FI Voss 500 .

STHI07N50-STMicroelectronics.pdf

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Datasheet Details

Part number:

STHI07N50

Manufacturer:

STMicroelectronics ↗

File Size:

195.11 KB

Description:

HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

Features

* a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and rel

Applications

* AUTOMOTIVE IGNITION

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STHI07N50 HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS STMicroelectronics

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